Karl Hirschman

Karl Hirschman

Professor

2010 Submissions

Formal Presentation

Veeramachaneni, Bharat, J.D. Winans, S. Hu, D. Kawamura, P.M. Fauchet, K. Witt, and K.D. Hirschman. “A Novel Technique for Localized Formation of SOI Active Regions.” Porous Semiconductors - Science and Technology (PSST-2010) 7th International Conference. 14- 19 March 2010. Presentation. " 

Published Article

McCabe, Andrew M., Robert G. Manley, J.G. Couillard, C.A. Kosik Williams, and K.D. Hirschman. “High Field Induced Stress Suppression of GIDL Effects in Accumulation-Mode P Channel TFTs.” ECS Transactions, 33.5 (2010): 95-103. Web. "  É *

Rettmann, Ryan D., J.G. Couillard, and K.D. Hirschman. “Characterization of Silicon-on-Glass Substrates using Variable Angle Spectroscopic Ellipsometry.” ECS Transactions, 33.5 (2010): 135-142. Web. "  É *