Seth M. Hubbard

Assistant Professor

Office: 17-2175

Phone: 585-475-4214

smhsps@rit.edu

PRINCIPLE RESEARCH

• Nano-structures (quantum wires/dots) for enhanced efficiency photovoltaic cells.
• Growth of semiconductor nanostructures using MOCVD growth techniques
• Novel Approaches to Power Conversion (alphavoltaics, thin-film III-Vs)
• Wide-bandgap nanostructured gas sensors
• Nanostructured GaN using wet chemical etching

RECENT PUBLICATIONS

1. S.M. Hubbard, D. Wilt, S. Bailey, D. Byrnes, R. Raffaelle, "OMVPE Grown InAs Quantum Dots for Application in Nanostructured Photovoltaics", Proc. of the IEEE World Conference on Photovoltaic Energy Conversion, 2006.
   
   
2. S.M. Hubbard, "Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-Nitride Heterostructures for Application in Electronic Devices", Ph.D. Thesis, University of Michigan, 2005.
   
   
3. S.M. Hubbard, G. Zhao, D. Pavlidis, W. Sutton, E. Cho, "High Resistivity GaN Buffer Templates and their Optimization for GaN-Based HFETs", J. Crystal Growth 284, 297-305 (2005).
   
   
4. S.M. Hubbard, G. Zhao, D. Pavlidis, W. Sutton, E. Cho, "Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by OMVPE", Mater. Res. Soc. Symp. Proc. 831, E11.11.1 (2004).
   
   
5. G. Zhao, S.M. Hubbard, D. Pavlidis, "Yellow Luminescence Centers of GaN", Jap. J. Appl. Phys. 43, 2471-2472 (2004).
   
   
6. S.M. Hubbard, D. Pavlidis, V. Valiaev, A. Eisenbach, "Metal-Organic Vapor Phase Epitaxy Growth and Characterization of AlN/GaN Heterostructures", J. Elect. Mat. 31, 395-401 (2002).
   
   
7. S.M. Hubbard, D. Pavlidis, V. Valiaev, M.A. Stevens-Kalceff, I.M. Tiginyanu, "Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures", Mat. Sci. Eng. B, B91-92, 336-340 (2002).
   
   
8. D. Cui and S.M. Hubbard, D. Pavlidis, A. Eisenbach, C. Chelli, "Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors", Semicond. Sci. Technol. 17, 503-509 (2002).
   
   
9. S. Mohammadi, S.M. Hubbard, C. Chelli, D. Pavlidis, B. Bayraktaroglu, "Photoluminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs", Solid-State-Electronics 44, 739-46 (2000).
   
   
10. S.M. Hubbard, M. Tabib-Azar, C.M. Schnabel, S. Bailey, "Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique", J. Appl. Phys. 84, 3986-92 (1998).