NanoPower Research Laboratory
NanoPower Research Labs
Rochester Institute of Technology
156 Lomb Memorial Drive
Rochester, NY 14623
Seth Hubbard received his Ph.D. in Electrical Engineering from the University of Michigan Ann Arbor in 2005 and is currently an Associate Professor of Physics and Microsystems Engineering at the Rochester Institute of Technology. His doctoral research consisted of studying the effects of materials properties and epitaxial device design on high power heterojunction field effect transistors grown using vapor phase epitaxy. Dr. Hubbard currently leads the NanoPower Research Laboratoryâs PV team, working on the epitaxial growth, fabrication and characterization of nanostructured solar photovoltaic devices. He has co-authored over 34 journal publications on quantum electronic and photovoltaic devices. Prior to RIT, Dr. Hubbard was a National Research Council (NRC) Postdoctoral Research Associate at NASA Glenn Research Center. Dr. Hubbard also serves as an Editor of the IEEE Journal of Photovoltaics and the Publications Chair of the 38th IEEE Photovoltaics Specialist Conference. Dr. Hubbard is also a 2009 recipiant of the prestigious National Science Foundation CAREER award.
Undergraduate and graduate education and mentoring in areas related to photovoltaics, electronics, solid state physics, materials and semiconductors, and microsystems engineering. Courses I teach include Electronics, Introduction to Materials Science and Engineering, Modern Physics, Physics III (electricity and magnetism) and Introduction to Micro and Nanostructures.
My research is focused on quantum photovoltaics devices, materials growth and device design as well as novel sensors using nanostructures. My group's expertise involves vapor phase epitaxy (VPE) of photovoltaic devices and nanostructures, nanostructured device design, photovoltaic characterization as well as testing. Our group was the first to grown VPE based InAs QD solar cells and demonstrate a sub-bandgap absorption process as well a short circuit current enhancement.
1. M. Slocum, D. Forbes, and S. Hubbard, "Subbandgap current collection through the implementation of a doping superlattice solar cell" Applied Physics Letters, accepted and in press, 2012.
2. S. M. Hubbard, C. Mackos, A. Podell, S. Polly, C. Bailey, and D. V. Forbes, "Effect of Vicinal Substrates on the Growth and Device Performance of Quantum Dot Solar Cells," Solar Energy Materials and Solar Cells, in press, 2012.
3. C. G. Bailey, D. V. Forbes, S. J. Polly, Z. S. Bittner, Y. Dai, C. Mackos, R. P. Raffaelle, and S. M. Hubbard, "Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage," Photovoltaics, IEEE Journal of, vol. 2, pp. 1-7, 2012.
4. C. G. Bailey, D. V. Forbes, R. P. Raffaelle, and S. M. Hubbard, "Near 1V open circuit voltage InAs/GaAs quantum dot solar cells," Appl. Phys. Lett. 98 (163105) 2011.
5. C. D. Cress, S. J. Polly, S. M. Hubbard, R. P. Raffaelle, and R. J. Walters, "Demonstration of a nipi-diode photovoltaic," Progress in Photovoltaics: Research and Applications, 2011.
6. D. Forbes, S. Hubbard, R. Raffaelle, and J. S. McNatt, "Au-catalyst-free epitaxy of InAs nanowires," Journal of Crystal Growth, vol. 312, pp. 1391-1395, 2010.
7. C. Bailey, S. M. Hubbard, D. Forbes, and R. Raffaelle, "Evaluation of strain balancing layer thickness for InAs / GaAs QD arrays using HRXRD and Photoluminescence," Applied Physics Letters 95, 203110 (2009).
8. S. M. Hubbard, C. Bailey, S. Polly, C. Cress, J. Andersen, D. Forbes, and R. Raffaelle, "Nanostructured photovoltaics for space power," Journal of Nanophotonics 3, 031880-031816 (2009).
9. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, âEffect of strain compensation on quantum dot enhanced GaAs solar cellsâ, Appl. Phys. Lett. 92, 123512 (2008).
10. R. Raffaelle, C. Bailey, S. Hubbard, S. Polly, D. Forbes, âQuantum Dot Spectral Tuning of Multijunction III-V Solar Cellsâ, Mater. Res. Soc. Symp. Proc. 1121E, (2008).