
The Semiconductor Device Research Laboratory (SDRL) in the Department of Electrical Engineering, Kate Gleason College of Enginering at Rochester Institute of Technology (RIT) was established in 2002. Our research group focuses on Numerical Techniques for RF Circuit Simulation, Design of Power Amplifiers, and Modeling and Characterization of Electronic devices and MEMS based circuits. Currently active projects are on physics-based modeling of GaN and SiC-based devices incorporating trapping and thermal effects, modeling of MEMS microswitch and design of high-efficiency power amplifiers.
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