RIT Center for Nanolithography Research

Thin Film Research

Optical thin films for UV/VUV

UV/VUV properties of various oxide, nitride, silicide, and intermetallic thin films and multilayer film stacks for application as attenuated phase shift mask (APSM) materials, optical AR's, resist ARCs, binary masks materials have been investigated. Thin films refractive index and extinction coefficient data was obtained by means of spectroscopic ellipsometry combined with spectrophotometry.

Mobile optical thin films for UV/VUV

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Composite films for UV/VUV

Atomistic modelling allows for simulation of various composites based on the materials we have characterized. An effective media approximation is used, which assumes structural dimension (grain size, layer thickness, etc.) is less than 0.1 of minimum wavelength considered.

Mobile composite films for UV/VUV

Similar to the original link, but accessible via mobile phone compatible xhtml. There is also a simplified go redirect: Mobile composite thin films

Resist parameter Characterization

Several commercial resists have been optically characterized . Results of these studies include the n&k data, Cauchy coefficients, and the ABC parameters (Dill parameters). The extracted Cauchy coefficients are valid for use at wavelengths of 400 nm to 800 nm.
Aberration Metrology | Immersion Fluids Research | Optical Extensions and Image Theory |Immersion Lithography | High NA and Polarization | EUV
©1996-2012 Center for Nanolithography Research, Rochester Institute of Technology