UV/VUV properties of various oxide, nitride, silicide, and intermetallic thin
films and multilayer film stacks for application as attenuated phase shift
mask (APSM) materials, optical AR's, resist ARCs, binary masks materials have
been investigated. Thin films refractive index and extinction coefficient data
was obtained by means of spectroscopic ellipsometry combined with spectrophotometry.
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Atomistic modelling allows for simulation of various composites based on the
materials we have characterized. An effective media approximation is used,
which assumes structural dimension (grain size, layer thickness, etc.) is less
than 0.1 of minimum wavelength considered.
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Several commercial resists have been optically characterized . Results of these
studies include the n&k data, Cauchy coefficients, and the ABC parameters
(Dill parameters). The extracted Cauchy coefficients are valid for use at wavelengths
of 400 nm to 800 nm.