Dr. Christopher R. Hoople earned a B.S. in Electrical Engineering from Union College in Schenectady, NY and his Ph.D. in Electrical Engineering from Cornell. He worked for Eastman Kodak Company in Rochester until 2001 and t joined the faculty at RIT in the fall of 2001.
At Kodak, Dr. Hoople was involved in process development for Charge Coupled Device Image Sensors. He was in charge of the Platinum Silicide process for Infra-red Detectors, and was involved in the development of Indium Tin Oxide, a transparent conductor. He was also involved in investigations of materials for light-shields and for novel doping techniques.
At RIT, Dr. Hoople has focused primarily on undergraduate education. He believes in the importance of getting the students a strong foundation to their education, and among his favorite courses to teach are Circuits I, Circuits II and Electronics. He has developed a professional elective course on Power Electronics.
Publications and Patents:
- C.R. Hoople, J.P. Krusius “Characteristics of Submicrometer Gaps in Buried Channel Charge Coupled Device Structures” IEEE Transactions on Electron Devices vol. 38, no. 5, pp 1175-1181, 1991.
- T.P.Chow, and C. Hoople “The Effect of Oxygen Addition on Reactive-Ion-Etched Silicon Damage in CHF3 Plasmas” Journal of the Electrochemical Society, 138, 1399-1402 (1991).
- T.N. Blanton, C.R.Hoople “X-ray Diffraction Analysis of Ultrathin Platinum Silicide Films Deposited on (100) Silicon” Powder Diffraction vol. 17, no. 1, pp 7-9, March 2002
- G.A. Hawkins, E.T. Nelson, C.R. Hoople U.S. Patent # 5,241,199 “Charge coupled device (CCD) having high transfer efficiency at low temperature operation” 1993
- W.G. America, C.R. Hoople, L.R. Fendrock, S.L. Kosman U.S. Patent # 6,489,642 “Image sensor having improved spectral response uniformity”, December 3, 2002