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Sean Rommel

Sean Rommel
Associate Professor

Phone: 585-475-4723
Office: ENG/2549


Sean L. Rommel (IEEE Senior Member) received the B.S. and Ph.D. degrees in Electrical Engineering from the University of Delaware. His Ph.D. work focused on the realization of a CMOS compatible Si/SiGe Resonant Interband Tunnel diodes. From 2000-2002, he worked as a postdoctoral research associate at the University of Illinois at Urbana Champaign, focusing on the fabrication of low-loss InP ring resonators. In 2002, he was hired as an Assistant Professor at the Rochester Institute of Technology, where his group demonstrated the integration of Si/SiGe RITDs with CMOS. In 2008, he was awarded tenure and promoted to Associate Professor. His group also demonstrated a world record peak-to-valley current ratio for GaAs/InGaAs Esaki diode integrated on a Si substrate as well as the highest tunnel current density reported in Esaki Diodes. Prof. Rommel is the recipient of the 1997 George W. Laird Merit Fellowship, the 2000 Allan P. Colburn Prize for Dissertation in Mathematics and Engineering, and the 2000 Teaching Assistant Award. For more about Dr. Rommel see his personal website at:


Semiconductor Devices, Tunneling Devices, III-V on Si, Electron Beam Lithography, Scanning Electron Microscopy

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