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Sean Rommel

Sean Rommel
Associate Professor

Phone: 585-475-4723
Office: ENG/2549


Sean L. Rommel (IEEE Senior Member) received the B.S. and Ph.D. degrees in Electrical Engineering from the University of Delaware. His Ph.D. work focused on the realization of a CMOS compatible Si/SiGe Resonant Interband Tunnel diodes. From 2000-2002, he worked as a postdoctoral research associate at the University of Illinois at Urbana Champaign, focusing on the fabrication of low-loss InP ring resonators. In 2002, he was hired as an Assistant Professor at the Rochester Institute of Technology, where his group demonstrated the integration of Si/SiGe RITDs with CMOS. In 2008, he was awarded tenure and promoted to Associate Professor. His group also demonstrated a world record peak-to-valley current ratio for GaAs/InGaAs Esaki diode integrated on a Si substrate as well as the highest tunnel current density reported in Esaki Diodes. Prof. Rommel is the recipient of the 1997 George W. Laird Merit Fellowship, the 2000 Allan P. Colburn Prize for Dissertation in Mathematics and Engineering, and the 2000 Teaching Assistant Award. For more about Dr. Rommel see his personal website at:


Semiconductor Devices, Tunneling Devices, III-V on Si, Electron Beam Lithography, Scanning Electron Microscopy

Recent Publications:

  1. K. Majumdar, P. Thomas, W. Loh, P. Hung, K. Matthews, D. Pawlik, B. Romanczyk, M. Filmer, A. Gaur, R. Droopad, S.L. Rommel, C. Hobbs, and P.D. Kirsch, "Mapping Defect Density in MBE Grown In0.53Ga0.47As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics," IEEE Transactions on Electron Devices, vol. 61, pp. 2049-2055, (2014)., DOI:10.1109/TED.2014.2318597
  2. A. J. Grede and S. L. Rommel, "Components of Channel Capacitance in Metal-Insulator-Semiconductor Capacitors," Journal of Applied Physics, vol. 114, pp. 114510 -114514, 2013. DOI: 10.1063/1.4821835
  3. B. Romanczyk, P. Thomas, D. Pawlik, S. L. Rommel, W.−Y. Loh, M. H. Wong, K. Majumdar, W.−E Wang, and P. D. Kirsch, "Benchmarking Current Density in Staggered Gap In0.53Ga47As/ GaAs0.5Sb0.5 Heterojunction Esaki Tunnel Diodes," Applied Physics Letters, vol. 102, pp. 213504-213507, (2013). DOI: 10.1063/1.4808362
  4. D. Pawlik, B. Romanczyk, P. Thomas, S. Rommel, M. Edirisooriya, R. Contreras-Guerrero, R. Droopad, W-Y Loh, M. H. Wong, K. Majumdar, W.-E Wang, P. D. Kirsch, and R. Jammy, â
    "Benchmarking and Improving III-V Esaki Diode Performance with a Record 2.2 MA/cm2 Peak Current Density to Enhance TFET Drive Current," IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 812-814, (2012). DOI: 10.1109/IEDM.2012.6479118
  5. W.S. Choo, M. Lusier, D. Mohata, S. Datta, D. Pawlik, S.L. Rommel, and G. Klimeck, "Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing," Applied Physics Letters, vol. 100, pp. 063504-063506, (2012). DOI:10.1063/1.3682506
  6. S. L. Rommel, D. Pawlik, P. Thomas, M. Barth, K. Johnson, S. K. Kurinec, A. Seabaugh, Z. Cheng, J. Li, J.S. Park, J.M. Hydrick, J. Bai, M. Carroll, J. Fiorenza, and A. Lochtefeld, “Record PVCR GaAs-based Tunnel Diodes Fabricated on Si Substrates using Aspect Ratio Trapping ” IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 739-742, (2008). DOI: 10.1109/IEDM.2008.4796801
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