Dr. Seth Hubbard received his BS in Physics from Drexel University, his MS in Electrical Engineering from Case Western Reserve University, and his Ph.D. in Electrical Engineering from the University of Michigan Ann Arbor. He is an Associate Professor of Physics and Microsystems Engineering at the Rochester Institute of Technology. His doctoral research consisted of studying the effects of materials properties and epitaxial device design on high power heterojunction field effect transistors grown using vapor phase epitaxy. Dr. Hubbard currently leads the NanoPower Research Laboratory’s PV team, working on the epitaxial growth, fabrication and characterization of nanostructured solar photovoltaic devices. He has co-authored over 34 journal publications on quantum electronic and photovoltaic devices. Prior to RIT, Dr. Hubbard was a National Research Council (NRC) Postdoctoral Research Associate at NASA Glenn Research Center. Dr. Hubbard also serves as an Editor of the IEEE Journal of Photovoltaics and the Publications Chair of the 38th IEEE Photovoltaics Specialist Conference. Dr. Hubbard is also a 2009 recipient of the prestigious National Science Foundation CAREER award.
My research is focused on quantum photovoltaics devices, materials growth and device design as well as novel sensors using nanostructures. My group's expertise involves vapor phase epitaxy (VPE) of photovoltaic devices and nanostructures, nanostructured device design, photovoltaic characterization as well as testing. Our group was the first to grown VPE based InAs QD solar cells and demonstrate a sub-bandgap absorption process as well a short circuit current enhancement.
1. M. Slocum, D. Forbes, and S. Hubbard, "Subbandgap current collection through the implementation of a doping superlattice solar cell" Applied Physics Letters, accepted and in press, 2012.
2. S. M. Hubbard, C. Mackos, A. Podell, S. Polly, C. Bailey, and D. V. Forbes, "Effect of Vicinal Substrates on the Growth and Device Performance of Quantum Dot Solar Cells," Solar Energy Materials and Solar Cells, in press, 2012.
3. C. G. Bailey, D. V. Forbes, S. J. Polly, Z. S. Bittner, Y. Dai, C. Mackos, R. P. Raffaelle, and S. M. Hubbard, "Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage," Photovoltaics, IEEE Journal of, vol. 2, pp. 1-7, 2012.
4. C. G. Bailey, D. V. Forbes, R. P. Raffaelle, and S. M. Hubbard, "Near 1V open circuit voltage InAs/GaAs quantum dot solar cells," Appl. Phys. Lett. 98 (163105) 2011.
5. C. D. Cress, S. J. Polly, S. M. Hubbard, R. P. Raffaelle, and R. J. Walters, "Demonstration of a nipi-diode photovoltaic," Progress in Photovoltaics: Research and Applications, 2011.
6. D. Forbes, S. Hubbard, R. Raffaelle, and J. S. McNatt, "Au-catalyst-free epitaxy of InAs nanowires," Journal of Crystal Growth, vol. 312, pp. 1391-1395, 2010.
7. C. Bailey, S. M. Hubbard, D. Forbes, and R. Raffaelle, "Evaluation of strain balancing layer thickness for InAs / GaAs QD arrays using HRXRD and Photoluminescence," Applied Physics Letters 95, 203110 (2009).
8. S. M. Hubbard, C. Bailey, S. Polly, C. Cress, J. Andersen, D. Forbes, and R. Raffaelle, "Nanostructured photovoltaics for space power," Journal of Nanophotonics 3, 031880-031816 (2009).
9. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, âEffect of strain compensation on quantum dot enhanced GaAs solar cellsâ , Appl. Phys. Lett. 92, 123512
10. R. Raffaelle, C. Bailey, S. Hubbard, S. Polly, D. Forbes, âQuantum Dot Spectral Tuning of Multijunction III-V Solar Cellsâ , Mater. Res. Soc. Symp. Proc. 1121E, (2008).