Dr. Karl D. Hirschman, Assistant Professor, Rochester Institute of Technology

 

Microelectronic Engineering

82 Lomb Memorial Drive

Rochester, New York 14623

Fax: (585) 475-5041

Tel: (585) 475-5130

Email:  kdhemc@rit.edu

 

 

Karl D. Hirschman received the B.S. degree in Microelectronic Engineering in 1990 and the M.S. degree in Electrical Engineering in 1992 from the Rochester Institute of Technology, Rochester, NY.  He received the Ph.D. degree in Electrical Engineering in 2000 from the University of Rochester, Rochester, NY.  Dr. Hirschman has been on the faculty of the Microelectronic Engineering at RIT since 1993.  Prior to teaching at RIT, he worked for IBM at the Advanced Semiconductor Technology Center in East Fishkill, NY as a process development engineer.  His research interests include silicon-based optoelectronics and tunneling transport devices, where he has published over 30 technical papers.  He is an active member in the IEEE EDS and MRS, and has served as an officer of the Rochester IEEE Electron Device Society local chapter for the last eight years.  He coordinates the IEEE Annual EDS Activities in Western NY conference, and is also serving on the IEEE/SEMI ASMC steering committee.

 

 

Experience    

 

Rochester Institute of Technology, Rochester, NY

            Director, Semiconductor & Microsystems Fabrication Laboratory  (2001 – present)

Assistant Professor, Department of Microelectronic Engineering  (1997 – present)

            Instructor, Department of Microelectronic Engineering  (1993 – 1997)

                       

IBM Microelectronics, East Fishkill, NY  (1990 – 1993)

            Process Development Engineer, Advanced Semiconductor Technology Center,

            CMOS logic & DRAM process development

 

Education      

 

Ph.D., Electrical and Computer Engineering, University of Rochester, 2000.

                 Advisor:  Philippe M. Fauchet

                 Thesis:  "Fabrication and Characterization of Oxide-Passivated

                               Nanocrystalline Silicon Light Emitting Devices"

            M.S., Electrical Engineering, Rochester Institute of Technology, 1992.

            B.S., Microelectronic Engineering, Rochester Institute of Technology, 1990.

 

Current Research Interests:

 

·       Si-based optoelectronics

·       Tunneling transport devices for memory and logic

·       Integration of novel device structures in silicon technology

·       Quality engineering for process capability improvement

           

Awards and Citations:

 

·       Nomination for the RIT Eisenhart Excellence in Teaching Award for 1997, 1998, 1999

·       IEEE Rochester Chapter, Electron Devices Society Service Award in 1998 and 1999

·       RIT QED (Quality Engineering by Design) Robust Award in 1996 and 1999

·       Quality Medal from Wismar Engineering School (Maritime Navigational School) in 1997

 

 

Current Funded Research:

 

1)  RIT Kate Gleason College of Engineering, Research and Development Initiative Award, 1-year duration, PI with Dr. T.G. Brown (Co-PI, UR Institute of Optics):  "Silicon-on-Insulator Based Modulators and Switches for High Speed Optical Telecommunications"

 

2)  NSF grant ref: ECS-0080760, 3-year duration, Co-PI with Dr. Santosh Kurinec (Co-PI) and Dr. Paul R. Berger (PI, Ohio State):  "Si-Based Tunnel Diode Integration with CMOS and SiGe HBTs"

 

 

Undergraduate Senior Project Advisees:  Joseph Miceli (2000), Burcay Gurcan (1999), Tina Wheaton (1999), Jason Benz (1998), Chai Ing-Cheng (1998), James Daniels (1997), Abram Detofsky (1997), Daniel Fullerton (1997), Daniel Carderelli (1996), Lena Zavyalova (1996), Von Jerick Marcos (1995), Manish Gulati (1995)

 

Graduate Student Advisees:  (1) Suraj Bhaskaran, (M.S. 2000) Design of RIT's Submicron CMOS Process, (2) Ian Livingston, (M.S. 1999) Fabrication of an Integrated Surface Micro-electro-mechanical Capacitive Pressure Sensor, (3) Keith Capasso, (M.S. 1999) Process Development and Reliability of Thin Gate Oxides, (4) Michael Shippers, (M.S. 1996) Process Design for Charge-Injection Based Imaging Array Fabrication, (5) Nipun Saxena, (M.E. 1995) Feasibility Study of a CCD Controller/Driver for Field Emission Display Applications, (6) Raymond Talacka, (M.S. 1994) Design and Fabrication of Lateral High Power Devices for Power Integrated Circuit Applications, (7) Terrance J. Fennelly, Jr., (M.S. 1994) Statistical Methodologies for the Estimation and Reduction of Process Variation, (8) Shubhra Srivastav, (M.E. 1994) Short-Loop Optimization of the P-well CMOS Process at RIT, (9) Reuben Ferguson, (M.E. 1994) Design and Simulation of a CCD Controller/Driver for Field Emission Display Applications

 

 

Selected Publications:  Silicon-Based Devices

 

1.     K.D. Hirschman, N.E. Wescott, J. Neiser and T.G. Brown, "Silicon-on-Insulator Based Modulators and Switches for High Speed Optical Telecommunications,"  IEEE UGIM Symp. Proc. 14, 64 (2001).

2.     S. Kurinec, J. Kempisty, K.D. Hirschman, N. Jin, S. Chung, P. Berger and P. Thompson, “Integration of Silicon Based Tunnel Diodes with CMOS:  An RIT-OSU-NRL-NSF Effort,”  IEEE UGIM Symp. Proc. 14, 74 (2001).

3.     K.D. Hirschman and P.M. Fauchet , "Modeling Carrier Transport in Oxide-Passivated Nanocrystalline Silicon LEDs," Mat. Res. Soc. Symp. Proc. 638 (2001).

4.     K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta and P.M. Fauchet, "An All-silicon Integrated Light Emitter Technology," Quantum Optoelectronics Technical Digest 9, p. x+152, 135-7 (1997).

297, 254 (19

5.     K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta and P.M. Fauchet, "Silicon-based Visible Light-Emitting Devices Integrated Into Microelectronic Circuits,"  Nature 384, 338 (1996).

6.     C. Peng, K.D. Hirschman and P.M. Fauchet, "Carrier Transport in Porous Silicon Light-Emitting Devices," J. Appl. Phys. 80, 295 (1996).

 

Selected Publications - Quality Engineering and Education

 

1.     K.D. Hirschman, "A Tolerance Analysis for Manufacturing to Direct Process Capability Improvement Efforts," IEEE/SEMI ASMC Symp. Proc. 11, 377 (2000).

2.     K.D. Hirschman and P.D. Rack, "Exploring Silicon Process Technology Through RIT's NPN BJT Process,” IEEE UGIM Symp. Proc. 13, 94 (1999).

3.     L.F. Fuller, K.D. Hirschman, "Teaching CMOS Integrated Circuit Manufacturing Laboratory Using a Student Operated Factory," IEEE UGIM Symp. Proc.12, 182 (1997).

4.   K.D. Hirschman, T.J. Fennelly, Jr., "A Statistical Strategy for Directing Process Capability Improvement Efforts," IEEE ISSM Symp. Proc. 4, 41 (1995).