Microelectronics Engineering Department at RIT in collaboration with Ohio State University and U. S. Naval Research Laboratory (NRL) is conducting research in integrating Si-based tunnel diodes with CMOS and magnetic tunnel junctions. Such integration would allow devices such as low-power SRAM, multi-level memories, ultra-fast ADC's and triggering circuits to be built. This project is funded by the National Science Foundation (NSF).
This webpage is intended as a communicational tool for information sharing among RIT team members and to update the institutions involved of current research at the Center for Advanced Device Research (CADeR) at RIT. This site will provide progress report on projects, learning from discussion and experimental results and related resources.
CADRe,
Microelectronics Engineering Department,
Kate Gleason College of Engineering,
Rochester Institute of Technology,
Rochester, NY - 14623.
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