RIT researchers in engineering and science publish paper

Glenn Packard, a microsystems engineering Ph.D. student in the Kate Gleason College of Engineering, is co-author of a recently published paper, "Selective phosphorus doping of polycrystalline silicon on glass using self-assembled monolayer doping (MLD) and flash anneal." His co-authors include Karl Hirschman, professor in electrical and microelectronic engineering, Santosh Kurinec, professor in electrical and microelectronic engineering, Carolyn Spaulding, chemical engineering student, Alex Taylor, chemistry student, and Scott Williams, professor in chemistry and materials science. This paper evaluates the use of monolayer doping for devices made on polycrystalline silicon on glass.