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Semiconductor/Microprocessor Technologies

94-01

RIT IMPO Number
94-01
 
Technology
Micromachined Microaccelerometer for Measuring Acceleration Along Three Axes
 
IP Status
USP 5,357,803
 
Technology Description
A three-axis microaccelerometer/gyro utilizing MEMS technology has been patented by RIT. This device employs a free mass electrostatically suspended in a neutral position in a cage formed by an array of electrodes. This differs from other miniature and full-size accelerometers that use springs or cantilevers to support the sensing mass. The device can thus function as both an accelerometer and as a gyro achieving high accuracy and repeatability and has no mechanical hysteresis.
 
Licensing Status
Available for license
 

98-01

RIT IMPO Number
98-01
 
Technology
A Multi-Layered Attenuated Phase Shift Mask and a Method for Making the Mask
 
IP Status
USP 5,939,227
 
Technology Description
RIT has a suite of technologies available for attenuated phase shift masks for projection lithography. These technologies are for small wavelengths, including wavelengths at or below 160nm. Advantages of the RIT technologies include ease of manufacture, enhanced chemical durability, decreased defects due to co-deposition, use of multiple layers or a single, homogeneous, continuous layer.
 
Licensing Status
Available for license
 

98-09

RIT IMPO Number
98-09
 
Technology
Photomask for Projection Lithography at or Below 160 NM and Method Thereof
 
IP Status
USP 6,395,433
 
Technology Description
Part of technology portfolio described under Technology 98-01.
 
Licensing Status
Available for license
 

99-01

RIT IMPO Number
99-01
 
Technology
Projection Imaging System Using Rectangular or Square Apertures
 
IP Status
USP 6,541,750
 
Technology Description
Current project systems for optical lithography use circular apertures in both the objective and condenser lenses. This provides for uniform imaging of features on the masked oriented in any direction. However use of a circular condenser aperture significantly degrades the resolution of the features of the projected image. The RIT technology uses square or rectangular apertures resulting in substantial improvements in feature resolution. These apertures may be retrofitted into existing photolithographic equipment.
 
Licensing Status
Available for license
 

99-02

RIT IMPO Number
99-02
 
Technology
Masking Films for Use in Optical Lithography below 180 NM
 
IP Status
USP 6,368,755
 
Technology Description
Part of technology portfolio described under Technology 98-01.
 
Licensing Status
Available for license
 

99-03

RIT IMPO Number
99-03
 
Technology
Modification of a Projection Imaging System Using Rectangular or Square Apertures
 
IP Status
USP 6,556,361
 
Technology Description
Part of technology portfolio described under Technology 99-01.
 
Licensing Status
Available for license
 

99-04

RIT IMPO Number
99-04
 
Technology
An Attenuated Phase Shift Mask and a Method for Making the Mask
 
IP Status
USP 6,309,780
 
Technology Description
Part of technology portfolio described under Technology 98-01.
 
Licensing Status
Available for license
 

00-15

RIT IMPO Number
00-15
 
Technology
A System and Method for Electrostatic Bonding
 
IP Status
USP 6,638,627
 
Technology Description
The assembly of MEMS structures often requires the accurate placement of sub-components. This is especially true for optical MEMS devices. The sub-components are typically placed at the desired location and then permanently bonded using an adhesive or by actuation of MEMS locking structures. Maintaining proper sub-component registration is very difficult during permanent bonding. Sub-components may shift alignment as epoxies cure or solders reflow. RIT has filed a patent application on a new technique that can be used either as the temporary sub-component placeholder or as the permanent bonding force. This new technique uses the extremely strong electrostatic attraction between fixed charge and induced charge. The technique can be extended to assemble space-based components in a micro gravity environment without using conventional fasteners. The advantages of this invention are accuracy in alignment registration, retention of alignment positioning, utilization for temporary or permanent positioning, and prevention of formation of stray fields due to the dual dielectric structure.
 
Licensing Status
Available for license
 

01-05

RIT IMPO Number
01-05
 
Technology
Electrostatically Controlled Adaptive Optical Mirror
 
IP Status
Invention disclosure
 
Licensing Status
Call to Inquire
 

01-06

RIT IMPO Number
01-06
 
Technology
A Micro-Electro-Mechanical Varactor and a Method of Making Thereof
 
IP Status
USP 6,597,560
 
Technology Description
Varactors are variable capacitors typically fabricated from semiconductors. They are in essence semiconductor diodes in which the space charge region varies approximately as the square root of applied voltage. This variation causes the capacitance across the p-n junction to also vary as a function of applied voltage. Because of the square root relation between the applied voltage and the capacitance, the range of variation is limited. Current MEMS type varactors also suffer from the limited range of capacitance variation. RIT holds a patent on this new type of MEMS varactor. This invention creates a varactor with an extended dynamic range. The ratio of minimum to maximum capacitance can be much greater than unity. Furthermore the new design significantly reduces the overall mass of the varactor and increases the force used to modulate a movable plate in a unique way. Hence the invention will have a much faster response time than other MEMS varactors.
 
Licensing Status
Available for license
 

01-07

RIT IMPO Number
01-07
 
Technology
A Micro-Electro-Mechanical Switch and a Method of Making Thereof
 
IP Status
USP 7,280,014
 
Technology Description
Solid state semiconductor devices are now available for uses as miniature switches and relays. These have a major disadvantage in that the switched current passes through a semiconductor junction, which exhibits high resistance. Micro relays and switches that use contacts and applied electrostatic force for actuation often get stuck as a result of "stiction" in one position without the possibility of reversing the motion. At the molecular level a dominant force causing stiction is the van der Waals force, which is an inter-molecular force that results when molecules are very close to one another. This force is one of the major problems limiting MEMS in general. RIT has filed a patent application on a new type of MEMS switch that is controlled by electrostatic deflection forces that can be applied to both close and open the switch. No extraneous current path exists. Energy used to open and close the switch is limited to capacitively coupled displacement current. The dual force directionality will overcome stiction. The use of high potential embedded electrostatic charge effectively overcomes the van der Waals force with a minimal, if any, limitation on MEMS micro dimensions.
 
Licensing Status
Available for license
 

01-17

RIT IMPO Number
01-17
 
Technology
An Electrostatic Device and Method Thereof
 
IP Status
USP 6,841,917
 
Technology Description
In the microscopic realm the introduction of lubricants to mitigate friction may actually increase the propensity of micro and nano components to stick together. Short-range forces such as van der Waals and electrostatic forces also limit design and miniaturization of MEMS components in an effect called stiction. RIT has filed a patent application on a new technique to overcome these short-range force limitations through utilization of a compensating force that is sufficient to keep micro components from coming within short-range distances of each other. This invention utilizes fixed electronic charge as a non-magnetic form of levitation.
 
Licensing Status
Available for license
 

01-18

RIT IMPO Number
01-18
 
Technology
Micro Fluidic Devices: Valves, Agitators, and Pumps
 
IP Status
USP 7,195,393
 
Technology Description
In microfluidics it is often very difficult to create a valve that seals well and yet has a reasonably simple actuator mechanism. Many existing valve designs utilize materials which are non-typical for standard MEMS fabrication processes. RIT has a new microfuidic valve design that achieves a tight seal, has a wide opening for maximum flow, and has a simple yet robust actuator means. These microfluidic components utilize the concept of embedded electrostatic charges. The basic structures can be implemented to operate as valves, agitators and pumps. All of these devices can be fabricated using conventional processes in semiconductor foundries.
 
Licensing Status
Available for license
 

01-19

RIT IMPO Number
01-19
 
Technology
An Electrostatic Filter and Method Thereof
 
IP Status
USP 6,773,488
 
Technology Description
The need for highly effective particle filtering is ever increasing as the science of many technologies continues on the path of making devices, components, and systems ever smaller. Present filters are rated as to the smallest size particles that can be effectively trapped. However, to continually shrink the pore size for air or gas passage requires ever more energy to move the air or gas through the filtering system. This results in a very large energy cost. RIT has filed a patent application on a new filtering system that is not limited by particle size, has low air or gas flow energy requirements, and can be easily cleaned periodically and, hence, reused.
 
Licensing Status
Available for license
 

02-20

RIT IMPO Number
02-20
 
Technology
Narrow Channel Heat Sink
 
IP Status
Invention disclosure
 
Licensing Status
Call to Inquire
 

02-25

RIT IMPO Number
02-25
 
Technology
CIP of 98-09
Mask for Projection Photolithography at or Below About 160 nm and a Method Thereof
 
IP Status
USP 6,835,505
 
Technology Description
Part of technology portfolio described under Technology 98-01.
 
Licensing Status
Available for license
 

03-17

RIT IMPO Number
03-17
 
Technology
Distributed Electrode Charge Injection
 
IP Status
USP 7,287,328
 
Technology Description
A new technique has been developed to establish a desired charge density located at trap sites at the interface of dissimilar insulators. This technique does not require a vacuum chamber or an electron ballistic source as do current charge injection techniques. This technique is also applicable for charging other types of materials such as polymer electret films. This may be used for establishing local areas of embedded electronic charge for use in making MEMS devices. It can also be applied at the macroscopic scale to energy harvesters such as wind power generation.
 
Licensing Status
Available for license
 

03-18

RIT IMPO Number
03-18
 
Technology
Adhesion Stress Facilitated Sacrificial Removal
 
IP Status
Invention disclosure
 
Licensing Status
Call to Inquire
 

03-19

RIT IMPO Number
03-19
 
Technology
Cooling System with Multiple Evaporating Meniscuses
 
IP Status
Patent pending
 
Technology Description
A novel method and hardware to provide inlet and outlet devices to be incorporated into headers for liquid or gas flow in active cooling system and micro-flow MEMS devices. The invention is an adjunct to cooling systems disclosed in # 02-20 and # 03-22. This invention solves the difficult problem of facilitating in- and outflow of liquids and gases from headers into and out of microchannels of cooling devices and microfluidic MEMS.
 
Licensing Status
Available for license
 

03-20

RIT IMPO Number
03-20
 
Technology
Non-Damaging Electron Injection Method
 
IP Status
USP 7,217,582
 
Technology Description
A non-damaging ballistic electron injection process has been developed that fills the electronic traps at the silicon dioxide - silicon nitride interface without causing the deleterious effects associated with conventional ballistic electron injection processes. This invention is suitable for use with structures such as wind energy to electrical power transducers. It can be applied to MEMS devices that utilize embedded electronic charge as a means for actuation or self-generating sensors.
 
Licensing Status
Available for license
 

03-21

RIT IMPO Number
03-21
 
Technology
Stress in Thin Films
 
IP Status
Patent Pending
 
Technology Description
Since thin-film fabrication techniques were first introduced for production of MEMS devices one of the areas of significant research has been the reduction of film stresses and stress gradients. Thin-film processes can result in out-of-plane deformation of free-standing micromachined films that in turn could negatively impact performance of MEMS devices. A multi-layered, multi-material approach has been developed that creates an equivalently stress-free device. Using this new technique the suspended structure can be controlled for final geometry. This allows MEMS devices to have a final geometry that is design driven and not process dependant.
 
Licensing Status
Available for license
 

03-22

RIT IMPO Number
03-22
 
Technology
Boiling and Stability in Microchannels
 
IP Status
Patent pending
 
Technology Description
A novel microchannel heat sink has been developed by RIT, which is expected to be significantly more efficient than the currently available devices of this type. The physical basis for the invention is the fact that a change in phase in the cooling medium from liquid to vapor is accompanied by a large absorption of heat, much more so than just heat transfer through the walls of the microchannels from the heat generating device to the liquid. To maintain stable flow the vapor should be in small bubbles. See also 02-20 and 03-19.
 
Licensing Status
Available for license
 

03-24

RIT IMPO Number
03-24
 
Technology
Stability Control of Microbeams and Other Structures in a Charge Field
 
IP Status
Invention disclosure
 
Licensing Status
Call to Inquire