Kate Gleason College of Engineering
Jing Zhang is the Kate Gleason Assistant Professor in the Department of Electrical and Microelectronic Engineering in the Kate Gleason College of Engineering. Her main research interests lie in semiconductor photonics and nanoelectronics.
The emerging of III-Nitride semiconductors has shown promising device applications on photonics and electronics, advancing knowledge in the field of lighting, communication, quantum technologies, health care, and energy. For the pursuit of high efficiency, compact size, and high-level integration, III-Nitride semiconductor technology has been explored extensively in the past decades with significant progress, especially in Nobel-prize winning invention of blue light emitting diodes (LEDs).
Dr. Zhang’s research group focused on the use of III-Nitride materials for novel photonic and electronic devices such as ultraviolet (UV) LEDs/ lasers, monolithic white LEDs on novel ternary template, and nanowire power electronics for switching. For UV photonics, the wide bandgap materials have been widely used as the active region. However, the pursuit of efficient UV emitters with wavelength less than 250 nm has been limited to the fundamental challenge in physics. Her research work has proposed promising solutions for high-efficiency UV photonics. On the aspect of visible LEDs for solid state lighting, her work used novel ternary substrate for realizing green- and red-emitting LEDs, which leads to high-efficiency monolithic white LEDs.
Currently, III-Nitride based LEDs or micro LEDs have been investigated for the next generation display technology. The persistent issue, however, has been the lack of ability to integrate transistors with LEDs for control. Dr. Zhang’s research presented a novel vertical III-Nitride nanowire field effect transistor (FET) that can be monolithically integrated with micro LEDs for the first time. The demonstrated voltage-controlled light-emitting unit provides area savings, scaling, and seamless vertical integration. The vertical nanowire FET has great potential in power switching applications too.
Dr. Zhang obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang has published more than 30 refereed journal papers and 65 conference proceedings including invited talks. She is a recipient of Texas Instruments/Douglass Harvey Faculty Development Award, and National Science Foundation (NSF) CAREER Award.
RIT Kate Gleason College of Engineering