Dr. Salameh Ahmad
Designation:Assistant Professor
Department:Science and Liberal Arts
Email:sxacada@rit.edu
Phone number:043712071
About
Dr. Salameh Ahmad is an Assistant Professor of Condensed Matter Physics at Rochester Institute of Technology Dubai. He received his M.Sc. in Experimental Solid State Physics from Yarmouk University in 1999 and a Ph.D. in Theoretical Condensed Matter Physics from Michigan State University in 2007. Before joining RIT he was an Assistant professor of Physics at Michigan State University.
- Ph.D. in Condensed Matter Physics (Michigan State University, USA), 2007
- M.Sc.Solid State Physics, (Yarmouk University, Jordan), 1999
- B.Sc.Physics (Yarmouk University, Jordan), 1996
- Dissertation Fellowship, Michigan State University (2007)
- Research Assistantship,Michigan State University (2003-2007)
- Teaching Assistantship, Michigan State University (2002-2003) Teaching Assistantship,Yarmouk University (1997) Undergraduate Scholarship, Education Ministry in Jordan (1992-1996)
Dr. Ahmad research interest is theoretical understanding of electronic structure and transport properties of the novel ternary and quaternary narrow band-gap semiconductors containing different impurity atoms for their potential thermoelectric properties, using both LDA (local density approximation) and GGA (generalized gradient approximation) methods in DFT (density functional theory) calculations.
- Salameh Ahmad, “Electronic Structure of Defects in SnTe” dvanced Materials Research Vol. 701 (2013) pp 125-130 (2013) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/AMR.701.125
- Salameh Ahmad, S.D. Mahanti,Energy and Temperature dependence of relaxation time and Wiedemann-Franz law on PbTe, Phys. Rev. B 81, 165203 (2010).
- S.D. Mahanti, Khang Hoang, Salameh Ahmad, Atomic Ordering, Electronic Structure, and Transport Properties of LAST-m Systems, MRS (2007).
- S.D. Mahanti, Khang Hoang, Salameh Ahmad, Deep Defect States in Narrow Band-Gap Semiconductors, Physica B 401-402C, 291 (2007).
- Salameh Ahmad, S.D. Mahanti, Khang Hoang, M. G. Kanatzidis, Ab initio Studies of Electronic Structure of Defects in PbTe, Phys. Rev. B 74, 155205(2006).
- Salameh Ahmad, Khang Hoang, S. D. Mahanti, Ab initio Study of Deep Defect States in Narrow Band-Gap Semiconductors: Group III Impurities in PbTe,Phys. Rev. Lett. 96, 056403 (2006); 96, 056403(E)(2006).
- Salameh M. Ahmad, S. D. Mahanti, M. G. Kanatzidis: Ab initio Studies of Electronic Structure of Defects on the Te sites in PbTe in Materials and Technologies for Direct Thermal-to-Electric Energy Conversion, edited by Jihui Yang, Timothy P. Hogan, RyojiFunahashi, George S. Nolas (Mater. Res. Soc. Symp. Proc. 886, Warrendale, PA, 2006), 0886-F04-11.
- Salameh Ahmad, D. Bilc, S. D. Mahanti, M.G. Kanatzidis, Ab initio Studies of Electronic Structure of Defects in PbTe in Semiconductor Defect Engineering- Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA, 2005), E9.23.
- Abdel-Fatah D. Lehlooh, Salameh M. Ahmad, Sami H. Mahmood, Mössbauer Spectroscopy Study of Fe-Si Solid Solution Prepared by Mechanical Milling, Hyperfine Interactions 139/140: 335–344, 2002.