Kai Ni Headshot

Kai Ni

Assistant Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering

585-475-7855
Office Location
Office Mailing Address
17-2175

Kai Ni

Assistant Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering

Bio

Dr. Kai Ni received his B.S. degree in Electrical Engineering from University of Science and Technology of China, Hefei, China in 2011, M.S. degree of Electrical Engineering from Vanderbilt University, Nashville, TN, USA in 2013, and Ph.D. degree of Electrical Engineering from Vanderbilt University, Nashville, TN, USA in 2016. Since 2016, he was a postdoctoral associate at University of Notre Dame. He is currently an assistant professor in Microsystems Engineering at Rochester Institute of Technology.

His research interests lie in nanoelectronic devices enabling novel computing paradigms and storage technologies. In particular, he is interested in design of nanoelectronic devices for Artificial Intelligence accelerator, targeting at not only deep learnings but life-long learning and learning to learn general Artificial Intelligence. He is also interested in exploring unconventional computing by harnessing the novel functionalities of emerging devices, for example, Ising Machine for optimization problems, dynamical systems for computational hard problems, and hardware security etc. Additionally, he is interested in exploring unconventional electronics. For example, he is actively investigating the Cryogenic CMOS for high-performance computation and control for Quantum Computing. Another area is reliable and radiation hard electronics for Space Electronics. All these research efforts manifest a new exciting hyperscaling era to come, enabled by all these functional augmentation of today’s technology!

There are currently positions available in our group. Interested and highly motivated students are encouraged to send his/her CV to Dr. Kai Ni

585-475-7855

Personal Links

Currently Teaching

EEEE-480
4 Credits
This is an introductory course in analog electronic circuit analysis and design. The course covers the following topics: (1) Diode circuit DC and small-signal behavior, including rectifying as well as Zener-diode-based voltage regulation; (2) MOSFET current-voltage characteristics; (3) DC biasing of MOSFET circuits, including integrated-circuit current sources; (4) Small-signal analysis of single-transistor MOSFET amplifiers and differential amplifiers; (5) Multi-stage MOSFET amplifiers, such as cascade amplifiers, and operational amplifiers; (6) Frequency response of MOSFET-based single- and multi-stage amplifiers; (7) DC and small-signal analysis and design of bipolar junction transistor (BJT) devices and circuits; (8) Feedback and stability in MOSFET and BJT amplifiers.
EEEE-726
3 Credits
This is the first course in the graduate course sequence in analog integrated circuit design EEEE-726 and EEEE-730. This course covers the following topics: (1)Fundamentals of data conversion (2) Nyquist rate digital-to-analog converters (3) Quantization noise and analysis (4) Nyquist rate analog-to-digital converters (5) Sample and hold circuits (6) Voltage references (7) Static and dynamic testing of digital-to-analog converters (8) Cell based design strategies for integrated circuits (9)Advanced topics in data conversion.
MCSE-889
3 Credits
Topics and subject areas that are not regularly offered are provided under this course. Such courses are offered in a normal format; that is, regularly scheduled class sessions with an instructor.

In the News

  • March 22, 2023

    person holding a microphone giving a presentation.

    RIT honors 14 researchers added to prestigious PI Millionaires group

    RIT faculty members, who led research initiatives as principal investigators, were honored at a reception on March 21 to celebrate the individuals who helped the university reach record awards surpassing $92 million and place among the top private research universities in the country.

  • February 24, 2023

    In the clean room looking at semiconductors.

    RIT becomes partner in national semiconductor center

    RIT recently became a partner in the SUPREME Center (Superior Energy-efficient Materials and Devices), a new $34 million research center based at Cornell University. The center will focus on development of energy-efficient semiconductor materials and technologies.