Dr. Parsian K. Mohseni holds B.Eng. and Ph.D. degrees in Engineering Physics from McMaster University, where he conducted graduate research as part of the Centre for Emerging Device Technologies and the Canadian Centre for Electron Microscopy. He carried out postdoctoral research at the Micro and Nanotechnology Laboratory and the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. In 2015, Dr. Mohseni joined the Microsystems Engineering Ph.D. Program at RIT as an Assistant Professor.
His group's research interests are cross-disciplinary in nature, spanning the fields of solid state physics, optoelectronics, materials characterization, nano-engineering, and physical chemistry. The primary research focus of the group is bottom-up, heteroepitaxial crystal growth of III-V compound semiconductor nanowires on foreign, functional, and flexible substrates via MOCVD. Additionally, the group is interested in novel, top-down methods for fabrication of III-V and Si nanostructures using the metal-assisted chemical etching technique. This research aims to establish innovative synthesis paradigms that allow for precise manipulation of material properties at the nanometer scale and enable next-generation device technologies in optoelectronics, photonics, nanoelectronics, and photovoltaic energy conversion.
Dr. Mohseni has received research awards from the Canadian Institute for Photonic Innovations and the Ontario Centres of Excellence, along with Ontario Graduate Scholarships. His work has resulted in over 30 peer-reviewed publications and has been featured in MIT Technology Review, IEEE Spectrum, Compound Semiconductor, and Materials Today, amongst others. His research group is affiliated with the NanoPower Research Labs, Center for Detectors, and the Future Photon Initiative at RIT.