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Mohadeseh A. Baboli is a graduate student pursuing her Ph.D. degree in the Microsystems Engineering Program. She is a member of the Center for Detectors (CfD) and the NanoPower Research Laboratories (NPRL). Mohad received her B.S. degree in Electrical Engineering from Babol Institute of Technology in 2010. As a 3rd year undergraduate student, Mohad joined the Integrated Circuits Research Laboratory and conducted research on swarm intelligence-based computational algorithms for discrete optimization problems. In 2011, Mohad continued her studies toward a M.Sc. degree in Electrical Engineering at Tehran Azad University. Her focused research areas were on the optical properties of multi-wall carbon nanotube arrays, slow light in infiltrated hole-type photonic crystals, and all-optical logical gates with hopping surface plasmons.

After joining the Microsystems Engineering Ph.D. Program at the Rochester Institute of Technology, Mohad began working on selective area epitaxy of III-V semiconductor nanowires by metal-organic chemical vapor deposition (MOCVD), as part of Prof. Parsian Mohseni’s research group. Nanowires are interesting structures because of their relaxed lattice matching capacities and large surface area to volume ratios. Also, nanowires offer three-dimensional degree of freedom in modifying complex and novel heterostructures. Mohad uses various techniques including scanning transmission electron microscopy (STEM) and photoluminescence (PL) spectroscopy for characterization of semiconductor nanowires, toward device applications in optoelectronics and photovoltaics.

 

 




Mohad is seen here loading a sample in the AIXTRON 3×2 Close Coupled Showerhead metal-organic chemical vapor deposition (MOCVD; RIT NanoPower Research Laboratories) reactor, which she uses for crystal growth of III-V semiconductor nanowires.