Parsian Katal Mohseni Headshot

Parsian Katal Mohseni

Assistant Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
Program Faculty, School of Chemistry and Materials Science

585-475-7262
Office Location

Parsian Katal Mohseni

Assistant Professor

Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
Program Faculty, School of Chemistry and Materials Science

Education

BS, Ph.D., McMaster University (Canada)

Bio

Dr. Parsian K. Mohseni holds B.Eng. and Ph.D. degrees in Engineering Physics from McMaster University, where he conducted graduate research as part of the Centre for Emerging Device Technologies and the Canadian Centre for Electron Microscopy. He carried out postdoctoral research at the Micro and Nanotechnology Laboratory and the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. In 2015, Dr. Mohseni joined the Microsystems Engineering Ph.D. Program at RIT as an Assistant Professor.

Dr. Mohseni’s research interests are cross-disciplinary in nature, spanning the fields of solid state physics, optoelectronics, materials characterization, nano-engineering, and physical chemistry. His primary research focus is bottom-up, heteroepitaxial crystal growth of III-V compound semiconductor nanowires on foreign, functional, and flexible substrates via MOCVD. Additionally, he is interested in novel, top-down methods for fabrication of III-V and Si nanostructures using the metal-assisted chemical etching technique. His research aims to establish innovative synthesis paradigms that allow for precise manipulation of material properties at the nanometer scale and enable next-generation device technologies in optoelectronics, photonics, nanoelectronics, and photovoltaic energy conversion.

Dr. Mohseni has received research awards from the Canadian Institute for Photonic Innovations and the Ontario Centres of Excellence, along with Ontario Graduate Scholarships. His work has resulted in over 30 peer-reviewed publications and has been featured in MIT Technology Review, IEEE Spectrum, Compound Semiconductor, and Materials Today, amongst others.

For more about information about Dr. Mohseni, please visit his research group’s website.

Select Scholarship

Journal Paper
Kim, J.D., et al. "Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport." Advanced Functional Materials 27. (2017): 1-8. Print.
Choi, W., et al. "Direct Electrical Probing of Period Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires." ACS Nano 11. (2017): 1530-1539. Print.
Wilhelm, T.S., et al. "Fabrication of Suspended III-V Nanofoils by Inverse Metal-Assisted Chemical Etching of InGaP/GaAs Heteroepitaxial Films." ACS Applied Materials & Interfaces 10. (2018): 2058-2066. Print.
Song, Yi, et al. "Ultra-high Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method." IEEE Electron Device Letters 37. (2016): 970-973. Print.
Qu, Jiangtao, et al. "Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography." ACS Applied Materials & Interfaces 8. (2016): 26244-26250. Web.
Kong, Lingyu, et al. "Evidences for Rredox Reaction Driven Charge Transfer and Mass Transport in Metal-assisted Chemical Etching of silicon." Scientific Reports - Nature 6. (2016): 36582-13. Web.
Liu, Runyu, et al. "Enhanced Optical Transmission through MacEtch-Fabricated Buried Metal Gratings." Advanced Materials. (2015): Not listed at time of submission. Web.
Published Conference Proceedings
Baboli, M.A., et al. "Selective-Area Van Der Waals Epitaxy of InAsP Nanowires on Two-Dimensional Nanosheets: III-V Integration on Graphene, h-BN, and MoS2." Proceedings of the Nanowire Week. Ed. K.A. Dick. Lund, Scania: Nanowire Week, 2017. Web.
Mohseni, P.K. "Technology Parameter Space Mapping of InAsPNW Arrays on Graphene, h-BN, and MoS2Toward Selective-Area van der Waals Epitaxy." Proceedings of the Electronic Materials Conference. Ed. S. Mohney. South Bend, IN: EMC, 2017. Web.
Li, Xiuling, et al. "III-V Nanowires and Nano fins: Growth, Etching, and Devices." Proceedings of the International Conference on Solid State Devices and Materials. Ed. S. Iwamoto. Tskuba, Ibaraki, Japan: n.p., Print.
Invited Keynote/Presentation
Mohseni, Parsian K. "Solar Cells and Light Emitting Diodes via Wafer-Scale Monolithic Integration of III-V Semiconductor Nanowire Arrays on Si and Graphene." 39th IEEE EDS Activities in Western New York Conference. IEEE. Rochester, NY. 6 Nov. 2015. Conference Presentation.

Currently Teaching

MTSE-790
1 - 9 Credits
Dissertation research by the candidate for an appropriate topic as arranged between the candidate and the research advisor.
MCSE-795
1 Credits
In this seminar course students will present their latest research and learn about the research taking place in the program. All Microsystems Ph.D. students enrolled full time are required to attend each semester they are on campus.
MCSE-707
3 Credits
This course provides a comprehensive overview of theoretical principles, instrumentation, applications, and practical concepts related to advanced techniques for characterization of nanoscale materials and systems. Topics include: diffraction theory, low-energy and reflection high-energy electron diffraction, X-ray diffraction, X-ray reflectivity; analytical scanning electron microscopy techniques including electron beam-induced current, energy-/wavelength-dispersive X-ray spectrometry, and electron backscatter diffraction; analytical transmission electron microscopy techniques including selected-area and convergent-beam electron diffraction, electron energy-loss spectroscopy, energy-filtered imaging, and electron holography; focused ion beam-based characterization and patterning; spectroscopic techniques including photo-, electro-, and cathodo-luminescence spectroscopy, Raman spectroscopy, and Auger electron spectroscopy; scan probe microscopy techniques including atomic force, magnetic force, photo-induced force, Kelvin probe force, scanning tunneling, scanning near-field optical, and scanning microwave impedance microscopy; and ion beam techniques including secondary ion mass spectrometry and local electrode atom probe tomography. The above techniques will be explored with the aid of case studies from the current literature. Lecture content will be reinforced by active demonstrations conducted in various labs at RIT and University of Rochester.
MCSE-703
3 Credits
The intent of this course is to provide a comprehensive review of the fundamental concepts of materials science and engineering with applications to nano- and microsystems. Topics include crystallography, diffusion, phase diagrams, fluids, and thermal, elastic, electrical, optical and magnetic properties. This course provides students in the engineering or science fields of nano- and microsystems with the background for future coursework and research in materials engineering and applications.