S. R. Tatavarti, Z. S. Bittner, A. Wibowo, M. A. Slocum, G. Nelson, H. Kum, S. P. Ahrenkiel, and S. M. Hubbard, "Epitaxial Lift-off (ELO) of InGaP/GaAs/InGaAs solar cells with quantum dots in GaAs middle sub-cell," Solar Energy Materials and Solar Cells, vol. 185, pp. 153-157, 2018/10/01/ 2018.
H. Kum, Y. Dai, T. Aihara, M. A. Slocum, T. Tayagaki, A. Fedorenko, S. J. Polly, Z. Bittner, T. Sugaya, and S. M. Hubbard, "Two-step photon absorption in InP/InGaP quantum dot solar cells," Applied Physics Letters, vol. 113, p. 043902, 2018.
B. L. Smith, Z. S. Bittner, S. D. Hellstroem, G. T. Nelson, M. A. Slocum, A. G. Norman, D. V. Forbes, and S. M. Hubbard, "InAlAs photovoltaic cell design for high device efficiency," Progress in Photovoltaics: Research and Applications, vol. 25, pp. 706-713, 2017.
M. Slocum, D. V. Forbes, G. C. Hillier, B. L. Smith, J. G. J. Adams, and S. M. Hubbard, "Development of InAlAsSb growth by MOVPE," Journal of Crystal Growth, vol. 471, pp. 15-20, 2017.
G. T. Nelson, B.-C. Juang, M. A. Slocum, Z. S. Bittner, R. B. Laghumavarapu, D. L. Huffaker, and S. M. Hubbard, "GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell," Applied Physics Letters, vol. 111, p. 231104, 2017.
Y. Dai, S. J. Polly, S. Hellstroem, M. A. Slocum, Z. S. Bittner, D. V. Forbes, P. J. Roland, R. J. Ellingson, and S. M. Hubbard, "Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells," Journal of Applied Physics, vol. 121, p. 013101, 2017.
S.-i. Sato, K. J. Schmieder, S. M. Hubbard, D. V. Forbes, J. H. Warner, T. Ohshima, and R. J. Walters, "Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots," Journal of Applied Physics, vol. 119, p. 185702, 2016.
S. J. Polly, C. G. Bailey, A. J. Grede, D. V. Forbes, and S. M. Hubbard, "Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices," Journal of Crystal Growth, vol. 454, pp. 64-70, 2016.
N. P. Wells, T. U. Driskell, A. I. Hudson, S. D. LaLumondiere, W. T. Lotshaw, D. V. Forbes, and S. M. Hubbard, "Carrier quenching in InGaP/GaAs double heterostructures," Journal of Applied Physics, vol. 118, p. 065703, 2015.
W. H. Strong, D. V. Forbes, and S. M. Hubbard, "Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix," Materials Science in Semiconductor Processing, vol. 25, pp. 76-83, 2014.