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As part of RIT’s Microsystems Engineering Ph.D. Program, the “epitaxially-integrated nanoscale systems” (EINS) lab focuses on applied physics and engineering at the nanometer scale.
At the center of our research is the atomic-level assembly or epitaxy of III-V compound semiconductors by metalorganic chemical vapor deposition (MOCVD). We investigate the monolithic integration and manipulation of III-V nanocrystals on a wide variety of functional, foreign, and flexible platforms, including graphene, metallic foils, carbon-nanotubes, monolayer transition metal dichalcogenides, as well as conventional substrates such Si and III-V wafers. We explore the novel structural, optical, and electrical properties of our nanostructures through extensive materials characterization experiments, and we employ unique nano-fabrication processes, such as metal-assisted chemical etching, to develop innovative devices for applications in photovoltaics, optoelectronics, and nanoelectronics.
Motivated and hard-working students at all levels are encouraged to contact Dr. Mohseni regarding research opportunities.
Inquires regarding consulting services related to micro-/nano-engineering, epitaxial crystal growth, materials characterization, and optoelectronics can be directed to Dr. Mohseni via e-mail.