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NanoPower Research Laboratory

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Epitaxially-Integrated Nanoscale Systems Laboratory (Nanowire Devices)

Overview

Nanowires composed of III-V compound semiconductors are essential building blocks for next-generation nanophotonics and nanoelectronics systems. They can be epitaxially integrated with a vast selection of materials and device platforms, which enables functionality and manufacturing cost incentives beyond what can be achieved with conventional, film-based epitaxial archetypes.

As part of RIT’s Microsystems Engineering Ph.D. Program and NanoPower Research Laboratory, the “epitaxially-integrated nanoscale systems” (EINS) lab focuses on applied physics and engineering at the nanometer scale. At the center of our research is the atomic-level assembly or epitaxy of III-V compound semiconductor nanowires by metalorganic chemical vapor deposition (MOCVD).  We investigate the monolithic integration and manipulation of III-V nanocrystals on a wide variety of functional, foreign, and flexible platforms, including graphene, metallic foils, carbon-nanotubes, monolayer transition metal dichalcogenides, as well as conventional substrates such Si and III-V wafers. We explore the novel structural, optical, and electrical properties of our nanostructures through extensive materials characterization experiments and we employ unique nano-fabrication processes, such as metal-assisted chemical etching, to develop innovative devices for applications in photovoltaics, optoelectronics, and nanoelectronics.

Our mission is to demonstrate enhanced III-V nanowire synthesis and integration methods for hybrid applications in solar energy conversion, solid state lighting, lasing, and high-speed nanoelectronics.

Current Research Directions:

  • GaSb/InAs Nanowire Tunnel Diodes on Si
  • GaAsP/GaP Nanowire White Light LEDs
  • Selective Area Epitaxy of III-V’s on 2-D Monolayers
  • Multi-Junction III-V Nanowire on Si Solar Cells
  • Metal-Assisted Chemical Etching of Semiconductors using Non-Conventional Catalysts
     

About Parsian K. Mohseni

Dr. Parsian K. Mohseni holds B.Eng. and Ph.D. degrees in Engineering Physics from McMaster University, where he conducted graduate research as part of the Centre for Emerging Device Technologies and the Canadian Centre for Electron Microscopy. He carried out postdoctoral research at the Micro and Nanotechnology Laboratory and the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. In 2015, Dr. Mohseni joined the Microsystems Engineering Ph.D. Program at RIT as an Assistant Professor.

Dr. Mohseni has received research awards from the Canadian Institute for Photonic Innovations and the Ontario Centres of Excellence, along with Ontario Graduate Scholarships. His work has resulted in over 30 peer-reviewed publications and has been featured in MIT Technology Review, IEEE Spectrum, Compound Semiconductor, and Materials Today, amongst others.

More Information

Further information about Dr. Mohseni and his research group can be found here.

Selected Publications

  1. P. K. Mohseni, A. Behnam, J. D. Wood, X. Zhao, K. J. Yu, N. C. Wang, A. Rockett, J. A. Rogers, J. W. Lyding, E. Pop, X. Li, Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy, Advanced Materials 26, 3755-3760 (2014)
  2. P. K. Mohseni, S. H. Kim, X. Zhao, K. Balasundaram, J. D. Kim, L. Pan, J. A. Rogers, J. J. Coleman, X. Li, GaAs Pillar Array-Based Light Emitting Diodes Fabricated by Metal-Assisted Chemical Etching, Journal of Applied Physics 114, 064909-6 (2013)
  3. P. K. Mohseni, A. Behnam, J. D. Wood, C. D. English, J. W. Lyding, E. Pop, X. Li, InxGa1-xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation, Nano Letters 13, 1153-1161 (2013)
  4. P. K. Mohseni, G. Lawson, A. Adronov, R. R. LaPierre, Hybrid GaAs-Nanowire–Carbon-Nanotube Flexible Photovoltaics, IEEE Journal of Selected Topics in Quantum Electronics 17, 1070-1077 (2011)
  5. P. K. Mohseni, A. D. Rodrigues, J. C. Galzerani, Y. A. Pusep, R. R. LaPierre, Structural and Optical Analysis of GaAsP/GaP Core-Shell Nanowires, Journal of Applied Physics 106, 124306-7 (2009)
  6. P. K. Mohseni and R. R. LaPierre, A Growth Interruption Technique for Stacking Fault-Free Nanowire Superlattices, Nanotechnology 20, 025610-6 (2009)
  7. P. K. Mohseni, G. Lawson, C. Couteau, G. Weihs, A. Adronov, R. R. LaPierre, Growth and Characterization of GaAs Nanowires on Carbon Nanotube Composite Films: Toward Flexible Nanodevices, Nano Letters 8, 4075-4080 (2008)
  8. P. K. Mohseni, C. Maunders, G. A. Botton, R. R. LaPierre, GaP/GaAsP/GaP Core-Multishell Nanowire Heterostructures on (111) Silicon. Nanotechnology 18, 445304-6 (2007)