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Dr Seth Hubbard

Seth Hubbard

Dr Seth Hubbard

Rochester Institute of Technology
Associate Professor of Physics & Microsystems Engineering
College of Science/
College of Engineering
Director, NanoPower Research Labs,
Lead PI, Photovoltaics and Photonics Research
Curriculum Vitae
Google Scholar

Dr. Seth Hubbard is currently an Associate Professor of Microsystem Engineering and Physics at the Rochester Institute of Technology, as well as serving as Director of the NanoPower Research Laboratory. He also serves as Extended Faculty in Materials Science, Sustainability and Imaging Science.

Dr. Hubbard leads a team of undergraduate researchers, graduate students and postdoctoral fellows with an emphasis on epitaxial growth, device fabrication, and characterization of novel solar photovoltaic devices for both ground and space applications. He has received over $5M in funded external research related to photovoltaic device development, has authored or co-authored over 70 journal and conference publications on electronic and photovoltaic devices and received an NSF CAREER Award as well as the RIT Trustee Scholarship Award. Prior to RIT, Dr. Hubbard was a National Research Council (NRC) Postdoctoral Research Associate at NASA Glenn Research Center.

Dr. Hubbard also serves as an Editor of the IEEE Journal of Photovoltaics and is actively involved in the organization of the IEEE Photovoltaics Specialists Conference. He has been the advisor to 5 post-doctoral fellows, 3 PhD graduates and over 10 MS students. Dr Hubbard serves the undergraduate community by offering co-ops/ internships and support for student senior capstone projects.

Prof. Hubbard received his B.S. in Physics from Drexel University, his M.S. in Electrical Engineering and Applied Physics from Case Western Reserve University, and his Ph.D. in Electrical Engineering from The University of Michigan Ann Arbor. His doctoral research under Prof. Dimitris Pavlidis consisted of studying the effects of materials properties and epitaxial device design on high power GaN and AlGaN heterojunction field effect transistors grown using vapor phase epitaxy.