BS, Ph.D., University of Delaware
Sean L. Rommel (IEEE Senior Member) received the B.S. and Ph.D. degrees in Electrical Engineering from the University of Delaware. His Ph.D. work focused on the realization of a CMOS compatible Si/SiGe Resonant Interband Tunnel diodes. From 2000-2002, he worked as a postdoctoral research associate at the University of Illinois at Urbana Champaign, focusing on the fabrication of low-loss InP ring resonators. In 2002, he was hired as an Assistant Professor at the Rochester Institute of Technology, where his group demonstrated the integration of Si/SiGe RITDs with CMOS. In 2008, he was awarded tenure and promoted to Associate Professor. His group also demonstrated a world record peak-to-valley current ratio for GaAs/InGaAs Esaki diode integrated on a Si substrate as well as the highest tunnel current density reported in Esaki Diodes. Prof. Rommel is the recipient of the 1997 George W. Laird Merit Fellowship, the 2000 Allan P. Colburn Prize for Dissertation in Mathematics and Engineering, and the 2000 Teaching Assistant Award. For more about Dr. Rommel see his personal website at: http://people.rit.edu/slremc/
Semiconductor Devices, Tunneling Devices, III-V on Si, Electron Beam Lithography, Scanning Electron Microscopy
In the News
May 11, 2022
Powering the future
Supply chain disruptions and a strong demand for consumer electronics during the pandemic led to a global chip shortage. The shortage has highlighted the need to strengthen the domestic semiconductor industry and has put a new emphasis on microelectronic engineering education.
February 3, 2022
Semiconductors at RIT: What they are, how their lab makes them, and how they teach them
WROC-TV talks to Sean Rommel, professor and director of the microelectronic engineering program, and Michael Jackson, associate professor in the Department of Electrical and Microelectronic Engineering, about semiconductors.