Sean Rommel
Professor
Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
585-475-4723
Office Location
Office Mailing Address
17-2549
Sean Rommel
Professor
Department of Electrical and Microelectronic Engineering
Kate Gleason College of Engineering
Education
BS, Ph.D., University of Delaware
Bio
Sean L. Rommel (IEEE Senior Member) received the B.S. and Ph.D. degrees in Electrical Engineering from the University of Delaware. His Ph.D. work focused on the realization of a CMOS compatible Si/SiGe Resonant Interband Tunnel diodes. From 2000-2002, he worked as a postdoctoral research associate at the University of Illinois at Urbana Champaign, focusing on the fabrication of low-loss InP ring resonators. In 2002, he was hired as an Assistant Professor at the Rochester Institute of Technology, where his group demonstrated the integration of Si/SiGe RITDs with CMOS. In 2008, he was awarded tenure and promoted to Associate Professor. His group also demonstrated a world record peak-to-valley current ratio for GaAs/InGaAs Esaki diode integrated on a Si substrate as well as the highest tunnel current density reported in Esaki Diodes. Prof. Rommel is the recipient of the 1997 George W. Laird Merit Fellowship, the 2000 Allan P. Colburn Prize for Dissertation in Mathematics and Engineering, and the 2000 Teaching Assistant Award. For more about Dr. Rommel see his personal website at: http://people.rit.edu/slremc/
Specialties
Semiconductor Devices, Tunneling Devices, III-V on Si, Electron Beam Lithography, Scanning Electron Microscopy
Select Scholarship
Journal Paper
Grede, Alex and Sean L. Rommel. "Components of Channel Capacitance in Metal-insulator-semiconductor Capacitors." Journal of Applied Physics 114. 11 (2013): 114510 -114514. Print.
Romanczyk, Brian, et al. "Benchmarking Current Density in Staggered Gap In[sub 0.53]Ga[sub 0.47]As/GaAs[sub 0.5]Sb[sub 0.5] Heterojunction Esaki Tunnel Diodes." Applied Physics Letters 102. 21 (2013): 213504-4. Print.
Published Article
Pawlik, David, M. Barth, P. Thomas, S. Kurinec, S. Mookerjea , D. Mohata, S. Datta, S. Cohen, D. Ritter,and S. Rommel. “Sub-Micron InGaAs Esaki Diodes With Record High Peak CurrentDensity.” 68th Device Research Conference,21-23 June 2010. 163-164. Web. " É «
Currently Teaching
EEEE-260
Introduction to Semiconductor Devices
3 Credits
An introductory course on the fundamentals of semiconductor physics and principles of operation of basic devices. Topics include semiconductor fundamentals (crystal structure, statistical physics of carrier concentration, motion in crystals, energy band models, drift and diffusion currents) as well as the operation of pn junction diodes, bipolar junction transistors (BJT), metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors.
MCEE-101
Introduction to Nanoelectronics
1 Credits
An overview of semiconductor technology history and future trends is presented. The course introduces the fabrication and operation of silicon-based integrated circuit devices including resistors, diodes, transistors and their current-voltage (I-V) characteristics. The course also introduces the fundamentals of micro/nanolithography, with topics such as IC masking, sensitometry, radiometry, resolution, photoresist materials and processing. Laboratory teaches the basics of IC fabrication, photolithography and I-V measurements. A five-week project provides experience in digital circuit design, schematic capture, simulation, bread-boarding, layout design, IC processing and testing.
MCEE-495
Senior Design I
3 Credits
A capstone design experience for microelectronic engineering senior students. Students propose a project related to microelectronic process, device, component or system design, to meet desired specifications within realistic constraints such as economic, environmental, social, political, ethical, health and safety, manufacturability, and sustainability. The students plan a timetable and write a formal proposal. The proposal is evaluated on the basis of intellectual merit, sound technical/research plan, and feasibility. The proposed work is carried through in the sequel course, Senior Design Project II (MCEE-496). Each student is required to make a presentation of the proposal.
MCEE-496
Senior Design II
3 Credits
A capstone design experience for microelectronic engineering senior students. In this course, students conduct a hands-on implementation of the projects proposed in the previous course, Senior Design Project I. Technical presentations of the results, including a talk and a poster, are required at the annual conference on microelectronic engineering organized by the program. A written paper in IEEE format is required and is included in the conference journal.
MCEE-499
Microelectronic Engineering Co-op
0 Credits
One semester or summer of paid work experience in microelectronic engineering.
MCEE-505
Lithography Materials and Processes
3 Credits
Microlithography Materials and Processes covers the chemical aspects of microlithography and resist processes. Fundamentals of polymer technology will be addressed and the chemistry of various resist platforms including novolac, styrene, and acrylate systems will be covered. Double patterning materials will also be studied. Topics include the principles of photoresist materials, including polymer synthesis, photochemistry, processing technologies and methods of process optimization. Also advanced lithographic techniques and materials, including multi-layer techniques for BARC, double patterning, TARC, and next generation materials and processes are applied to optical lithography.
MCEE-515
Nanolithography Systems
3 Credits
An advanced course covering the physical aspects of micro- and nano-lithography. Image formation in projection and proximity systems are studied. Makes use of optical concepts as applied to lithographic systems. Fresnel diffraction, Fraunhofer diffraction, and Fourier optics are utilized to understand diffraction-limited imaging processes and optimization. Topics include illumination, lens parameters, image assessment, resolution, phase-shift masking, and resist interactions as well as non-optical systems such as EUV, maskless, e-beam, and nanoimprint. Lithographic systems are designed and optimized through use of modeling and simulation packages.
MCEE-599
Independent Study
1 - 5 Credits
A supervised investigation within a microelectronic engineering area of student interest.
MCEE-605
Lithography Materials and Processes
3 Credits
Microlithography Materials and Processes covers the chemical aspects of microlithography and resist processes. Fundamentals of polymer technology will be addressed and the chemistry of various resist platforms including novolac, styrene, and acrylate systems will be covered. Double patterning materials will also be studied. Topics include the principles of photoresist materials, including polymer synthesis, photochemistry, processing technologies and methods of process optimization. Also advanced lithographic techniques and materials, including multi-layer techniques for BARC, double patterning, TARC, and next generation materials and processes are applied to optical lithography. Graduate paper required.
MCEE-615
Nanolithography Systems
3 Credits
An advanced course covering the physical aspects of micro- and nano-lithography. Image formation in projection and proximity systems are studied. Makes use of optical concepts as applied to lithographic systems. Fresnel diffraction, Fraunhofer diffraction, and Fourier optics are utilized to understand diffraction-limited imaging processes and optimization. Topics include illumination, lens parameters, image assessment, resolution, phase-shift masking, and resist interactions as well as non-optical systems such as EUV, maskless, e-beam, and nanoimprint. Lithographic systems are designed and optimized through use of modeling and simulation packages. Graduate paper required.
MCEE-706
SiGe and SOI Devices and Technologies
3 Credits
This course introduces students to the fundamentals of III-V, SiGe and Silicon on Insulator (SOI) devices and fabrication technologies. The course will first discuss the band structure of the SiGe material system, and how its properties of band structure and enhanced mobility may be utilized to improve traditional Si devices. Basic heterojunciton theory is introduced to students. Some specific applications that are introduced include heterojunction bipolar transistors (HBTs), SiGe-channel MOS devices, high-electron mobility transistors (HEMTs) and tunnel FETs. Fabrication technologies for realizing SOI substrates that include SIMOX and SMART CUT technologies are described. The physics of transistors built on SOI substrates will be discussed. At the completion of the course, students will write a review paper on a topic related to the course.
MCEE-777
Master of Engineering Internship
1 - 4 Credits
This course number is used to fulfill the internship requirement for the master of engineering degree program. The student must obtain the approval of the department head before registering for this course.
MCEE-790
MS Thesis
1 - 6 Credits
The master's thesis in microelectronic engineering requires the student to prepare a written thesis proposal for approval by the faculty; select a thesis topic, adviser and committee; present and defend thesis before a thesis committee; prepare a written paper in a short format suitable for submission for publication in a journal.
MCEE-792
Graduate Research Project
3 Credits
This course number is used to fulfill the graduate project requirement under the non-thesis option for the MS degree in Microelectronic Engineering. During this course, the student will be required to perform a literature survey, and conduct a limited scope investigation. Appropriate topics for this project may include: (i) development/characterization/documentation of semiconductor fabrication processes, (ii) characterization/measurement/documentation of semiconductor devices, or (iii) detailed simulation/design/documentation of semiconductor devices or processes. Alternative topics may be pursued with approval of the faculty advisor. The student must obtain the approval of an appropriate faculty member to supervise the paper before registering for this course.
MCEE-795
Graduate Seminar
0 Credits
Weekly seminar series intended to present the state of the art in microelectronics research. Other research-related topics will be presented such as library search techniques, contemporary issues, ethics, patent considerations, small business opportunities, technical writing, technical reviews, effective presentations, etc.
MCEE-799
Graduate Independent Study
1 - 3 Credits
This course number should be used by students who plan to study a topic on an independent basis under the guidance of a faculty member. A written proposal with an independent study form is to be submitted to the sponsoring faculty member and approved by the department head prior to the commencement of work.
MTSE-777
Graduate Project
1 - 4 Credits
This course is a capstone project using research facilities available inside or outside of RIT.
In the News
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May 11, 2022
![four people in yellow clean suits looking at microchips.]()
Powering the future
Supply chain disruptions and a strong demand for consumer electronics during the pandemic led to a global chip shortage. The shortage has highlighted the need to strengthen the domestic semiconductor industry and has put a new emphasis on microelectronic engineering education.
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February 3, 2022
![researcher wearing a clean suit in a clean room.]()
Semiconductors at RIT: What they are, how their lab makes them, and how they teach them
WROC-TV talks to Sean Rommel, professor and director of the microelectronic engineering program, and Michael Jackson, associate professor in the Department of Electrical and Microelectronic Engineering, about semiconductors.
