Conferences and Short Courses

37th Annual Microelectronic Engineering Conference at RIT

April 15, 2019

5 PM Reception and 6 PM Dinner for Seniors, Alumni, Industrial Advisory Board and Invited Guests at RIT Inn and Conference Center

April 16, 2019

8 AM to 5 PM Conference at  RIT SLA Hall rm. 2210-2240

37th AMEC Agenda >

37th AMEC Abstracts  >

Integration of hafnium oxide based ReRAM with CMOS for neuromorphic computing applications, Nathaniel C. Cady, Professor, Colleges of Nanoscale Science & Engineering, SUNY Polytechnic Institute

Single Electron Transistors for Molecular Computer Readout, Matthew Filmer, Electrical Engineering, University of Notre Dame

2D materials for a new generation of multi-functional devices, Steven J. Koester, Professor, Department of Electrical and Computer Engineering, University of Minnesota

“Tiger Stripes” – A model for resolving complex process interactions in the pursuit of defect elimination, Chelsea Mackos, Director of Engineering, Solar Cells & CIC, SolAero Technologies

Demonstration of Record-High mm-Wave Power Performance using N-Polar Gallium Nitride HEMTs, Brian Romanczyk, Electrical and Computer Engineering Department, University of California Santa Barbara

Super activation obtained by melt UV laser annealing of highly surface-segregated dopants in high Ge content SiGe, Leonard M. Rubin, Chief Device Scientist, Axcelis Technologies

The RIT impact, Ken Way, Head of WW Business Development and Sales, Xilinx

Fabrication of Photonic LPCVD Silicon Nitride Waveguides, Robert Dalheim

Anisotropic Etch Process Characterization of Silicon Nitride in a Trion III Etcher, Sudmun Habib

Transfer Process for 2-Dimensional Transitional Metal Dichalcogenides Materials, William Huang

Capping Layers for Increased Thermal Stability of IGZO Thin-film Transistor, Jason Konowitch

Cross-Bar Biristor Array, Jeremiah Leit

FeFET Fabrication and Characterization at RIT, Jordan Merkel

Fabrication of AlGaN/GaN High Electron Mobility Transistors, Vijay Gopal Thirupakuzi Vangipuram

Sub 300 nm Fin Fabrication by Self-Aligned Double Patterning, Kelly Weiskittel