Xu and team publish article on strain-induced phase transition
Ke Xu, assistant professor in the School of Physics and Astronomy and faculty of microsystems engineering and the Future Photon Initiative, along with collaborators published “Strain-Induced 2H to 1T′ Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating” in the journal ACS Nano. The article demonstrated a fully reversible semiconducting to semimetallic phase transition via location-specific, field-induced strain, which is valuable for applications such as low-power phase-change memory and logic.
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