September 5, 2025
Dholabhai and students publish in 'Journal of Applied Physics'
Pratik Dholabhai, associate professor in the School of Physics and Astronomy, physics Ph.D. student Anish More, and alumnus William Ebmeyer ’23 (physics), published “Mechanisms for oxygen vacancy defect migration in SrTiO3/NiO heterostructures: Effect of interface layer chemistry and misfit dislocation structure” in Journal of Applied Physics. The research discusses the high-throughput atomistic framework that traces defect migration in thin film oxides to facilitate the design of high-performance fuel cell electrolytes, wherein control over defect-driven transport is key to functionality and efficiency.